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ACE2301 Datasheet(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2301 Datasheet(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 5 page ACE2301 P-Channel Enhancement Mode MOSFET VER 1.3 2 Packaging Type SOT-23-3 3 1 2 Ordering information ACE2301 XX + H Electrical Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA -20 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-2.8A 70.0 100.0 mΩ Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2.0A 85.0 150.0 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA -0.4 -0.9 V Zero Gate Voltage Drain Current IDSS VDS=-9.6V, VGS=0V -1 uA Gate Body Leakage IGSS VGS=±8V, VDS=0V ±100 nA Forward Trans conductance Gfs VDS=-5V, ID=-2.8A 6.5 S Dynamic 3) Total Gate Charge Qg VDS=-6V, ID=-2.8A VGS=-4.5V 5.8 10 nC Gate-Source Charge Qgs 0.85 SOT-23-3 Description 1 Gate 2 Source 3 Drain BM : SOT-23-3 Pb - free Halogen - free |
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