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TC1606N Datasheet(PDF) 1 Page - Transcom, Inc.

Part # TC1606N
Description  2W High Linearity and High Efficiency GaAs Power FETs
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Manufacturer  TRANSCOM [Transcom, Inc.]
Direct Link  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1606N Datasheet(HTML) 1 Page - Transcom, Inc.

  TC1606N Datasheet HTML 1Page - Transcom, Inc. TC1606N Datasheet HTML 2Page - Transcom, Inc.  
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TC1606N
REV4_20070502
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1 / 2
2W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 2W Typical Power at 6 GHz
PHOTO ENLARGEMENT
! Linear Power Gain: G
L = 8 dB Typical at 6 GHz
! High Linearity: IP3 = 43 dBm Typical at 6 GHz
! Non-Via Holes Source for Self-Bias Application
! Suitable for High Reliability Application
! Breakdown Voltage: BV
DGO
≥ 18 V
! Lg = 0.6
µm, Wg = 5 mm
! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
The TC1606N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, which
has high linearity and high Power Added Efficiency. The device is processed without via-holes for self-bias
applications. The long gate length makes the device to have high breakdown voltage. All devices are 100% DC
tested to assure consistent quality.
Bond pads are gold plated for either thermo-compression or thermo-sonic
wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include
commercial and military high performance power amplifier.
ELECTRICAL SPECIFICATIONS (TA=25
°°°°C)
Symbol
Conditions
MIN
TYP
MAX
UNIT
P1dB
Output Power at 1dB Gain Compression Point, f
= 6 GHz VDS = 8 V, IDS = 500 mA
32.5
33
dBm
GL
Linear Power Gain, f
= 6 GHz VDS = 8 V, IDS = 500 mA
8
dB
IP3
Intercept Point of the 3
rd-order Intermodulation, f = 6 GHz V
DS = 8 V, IDS = 500 mA,*PSCL = 20 dBm
43
dBm
PAE
Power Added Efficiency at 1dB Compression Power, f
= 6 GHz
43
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
1.2
A
gm
Transconductance at VDS = 2 V, VGS = 0 V
850
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 10 mA
-1.7**
Volts
BVDGO Drain-Gate Breakdown Voltage at IDGO = 2.5 mA
18
22
Volts
Rth
Thermal Resistance
8
°C/W
Note:
* PSCL: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1606N’s are divided into 3 groups:
(1)TC1606NP1519 : Vp = -1.5V to -1.9V (2) TC1606NP1620 : Vp = -1.6V to -2.0V
(3)TC1606NP1721 : Vp = -1.7V to -2.1V
In addition, the customers may specify their requirements.


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