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MJ13333 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MJ13333
Description  20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
Download  8 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJ13333 Datasheet(HTML) 2 Page - Motorola, Inc

   
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MJ13333
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
VCEO(sus)
400
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
0.25
5.0
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
ICER
5.0
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 12
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 13
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
60
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
(IC = 20 Adc, IB = 6.7 Adc)
(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C)
VCE(sat)
1.8
5.0
2.4
Vdc
Base Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C)
VBE(sat)
1.8
1.8
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
125
500
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC = 10 A,
IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 µs,
Duty Cycle
v 2.0%)
td
0.02
0.1
µs
Rise Time
(VCC = 250 Vdc, IC = 10 A,
IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 µs,
Duty Cycle
v 2.0%)
tr
0.3
0.7
µs
Storage Time
IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 µs,
Duty Cycle
v 2.0%)
ts
1.6
4.0
µs
Fall Time
v 2.0%)
tf
0.3
0.7
µs
Inductive Load, Clamped (Table 1)
Storage Time
(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,
VBE(off) = 5 Vdc, TC = 100°C)
tsv
2.5
5.0
µs
Crossover Time
(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,
VBE(off) = 5 Vdc, TC = 100°C)
tc
0.8
2.0
µs
Storage Time
(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,
VBE(off) = 5 Vdc, TC = 25_C)
tsv
1.8
µs
Crossover Time
(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,
VBE(off) = 5 Vdc, TC = 25_C)
tc
0.4
µs
Fall Time
VBE(off) = 5 Vdc, TC = 25_C)
tfi
0.2
µs
(1) Pulse Test: PW = 300
µs, Duty Cycle v 2%.


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