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MJ11028 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MJ11028
Description  50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJ11028 Datasheet(HTML) 1 Page - Motorola, Inc

   
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Motorola Bipolar Power Transistor Device Data
High-Current Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
• Junction Temperature to +200_C
MAXIMUM RATINGS
Rating
Symbol
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
Unit
Collector–Emitter Voltage
VCEO
60
90
120
Vdc
Collector–Base Voltage
VCB
60
90
120
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
ICM
50
100
Adc
Base Current — Continuous
IB
2
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C @ TC = 100_C
PD
300
1.71
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Lead Temperature for
Soldering Purposes for
v 10 seconds
TL
275
_C
Thermal Resistance Junction to Case
R
θJC
0.584
_C
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈ 3.0 k
≈ 25
PNP
MJ11029
MJ11031
MJ11033
BASE
EMITTER
COLLECTOR
≈ 3.0 k
≈ 25
NPN
MJ11028
MJ11030
MJ11032
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11028/D
© Motorola, Inc. 1995
MJ11028
MJ11030
MJ11032
MJ11029
MJ11031
MJ11033
50 AMPERE
COMPLEMENTARY
SILICON
DARLINGTON
POWER TRANSISTORS
60 – 120 VOLTS
300 WATTS
*Motorola Preferred Device
NPN
PNP
*
*
CASE 197A–05
TO–204AE (TO–3)


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