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MJ11017 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MJ11017
Description  30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJ11017 Datasheet(HTML) 2 Page - Motorola, Inc

   
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MJ11017 MJ11021 MJ11018 MJ11022
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0. 1 Adc, IB = 0)
MJ11017, MJ11018
MJ11021, MJ11022
VCEO(sus)
150
250
Vdc
Collector Cutoff Current
(VCE = 75, IB = 0)
MJ11017, MJ11018
(VCE = 125, IB = 0)
MJ11021, MJ11022
ICEO
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEV
0.5
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
400
100
15,000
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
VCE(sat)
2.0
3.4
Vdc
Base–Emitter On Voltage
IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
2.8
Vdc
Base–Emitter Saturation Voltage
(IC = 15 Adc, IB = 150 mA)
VBE(sat)
3.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
[hfe]
3.0
Mhz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJ11018, MJ11022
MJ11017, MJ11021
Cob
400
600
pF
Small–Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
75
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
PNP
Unit
Delay Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 50 V) (See Figure 2.)
td
150
75
ns
Rise Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 50 V) (See Figure 2.)
tr
1.2
0.5
µs
Storage Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 50 V) (See Figure 2.)
ts
4.4
2.7
µs
Fall Time
tf
10.0
2.5
µs
(1) Pulsed Test: Pulse Width = 300
µs, Duty Cycle v 2%.
Figure 2. Switching Times Test Circuit
V2
APPROX
+12 V
V1
APPROX
– 8.0 V
0
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
µs
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC
100 V
RC
SCOPE
TUT
RB
D1
51
+ 4.0 V
≈ 10 K
≈ 8.0
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.


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