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MJ11017 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MJ11017
Description  30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJ11017 Datasheet(HTML) 1 Page - Motorola, Inc

   
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Motorola Bipolar Power Transistor Device Data
Complementary Darlington
Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
• High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
VCEO(sus) = 250 Vdc (Min) – MJ11022, 21
• Low Collector–Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat) = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
MAXIMUM RATINGS
Rating
Symbol
MJ11018
MJ11017
MJ11022
MJ11021
Unit
Collector–Emitter Voltage
VCEO
150
250
Vdc
Collector–Base Voltage
VCB
150
250
Vdc
Emitter–Base Voltage
VEB
50
Vdc
Collector Current —
Continuous Peak
IC
15
30
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25_C
Derate Above 25
_C
PD
175
1.16
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 175
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.86
_C/W
(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle
v 10%.
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
50
75
100
125
200
200
50
100
0
150
175
25
0
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11017/D
© Motorola, Inc. 1995
MJ11017
MJ11021
MJ11018
MJ11022
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 120 VOLTS
200 WATTS
*Motorola Preferred Device
*
PNP
NPN
*
CASE 1–07
TO–204AA
(TO–3)


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