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MJ11012 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MJ11012
Description  30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MJ11012 Datasheet(HTML) 1 Page - Motorola, Inc

   
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Motorola Bipolar Power Transistor Device Data
High-Current Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc
• Monolithic Construction with Built–in Base Emitter Shunt Resistor
• Junction Temperature to +200_C
MAXIMUM RATINGS
Rating
Symbol
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
Unit
Collector–Emitter Voltage
VCEO
60
90
120
Vdc
Collector–Base Voltage
VCB
60
90
120
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current
IC
30
Adc
Base Current
IB
1
Adc
Total Device Dissipation @TC = 25_C
Derate above 25
_C @ TC = 100_C
PD
200
1.15
Watts
W/
_C
Operating Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.87
_C/W
Maximum Lead Temperature for
Soldering Purposes for
v 10 Seconds.
TL
275
_C
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 40
PNP
MJ11013
MJ11015
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 40
NPN
MJ11012
MJ11014
MJ11016
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11012/D
© Motorola, Inc. 1995
MJ11013
MJ11015
MJ11012
MJ11014
MJ11016
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 120 VOLTS
200 WATTS
*Motorola Preferred Device
PNP
NPN
*
CASE 1–07
TO–204AA
(TO–3)
REV 1


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