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MJ10020 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MJ10020
Description  60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10020 Datasheet(HTML) 2 Page - Motorola, Inc

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MJ10020 MJ10021
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
MJ10020
(IC = 100 mA, IB = 0)
MJ10021
VCEO(sus)
200
250
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
0.25
5.0
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
ICER
5.0
mAdc
Emitter Cutoff Current
(VEB = 2.0 V, IC = 0)
IEBO
175
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 13
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 14
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 15 Adc, VCE = 5.0 V)
hFE
75
1000
Collector–Emitter Saturation Voltage
(IC = 30 Adc, IB = 1.2 Adc)
(IC = 60 Adc, IB = 4.0 Adc)
(IC = 30 Adc, IB = 1.2 Adc, TC = 100_C)
VCE(sat)
2.2
4.0
2.4
Vdc
Base–Emitter Saturation Voltage
(IC = 30 Adc, IB = 1.2 Adc)
(IC = 30 Adc, IB = 1.2 Adc, TC = 100_C)
VBE(sat)
3.0
3.5
Vdc
Diode Forward Voltage
(IF = 30 Adc)
Vf
2.5
5.0
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
175
700
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 175 Vdc, IC = 30 A,
IB1 =
Adc, VBE(off) = 5.0 V, tp = 25 µs
Duty Cycle
v 2.0%).
td
0.02
0.2
µs
Rise Time
(VCC = 175 Vdc, IC = 30 A,
IB1 =
Adc, VBE(off) = 5.0 V, tp = 25 µs
Duty Cycle
v 2.0%).
tr
0.30
1.0
µs
Storage Time
IB1 =
Adc, VBE(off) = 5.0 V, tp = 25 µs
Duty Cycle
v 2.0%).
ts
1.0
3.5
µs
Fall Time
v 2.0%).
tf
0.07
0.5
µs
Inductive Load, Clamped (Table 1)
Storage Time
ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,
VBE(off) = 5 V, TC = 100°C)
tsv
1.2
3.5
µs
Crossover Time
ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,
VBE(off) = 5 V, TC = 100°C)
tc
0.45
2.0
µs
Storage Time
(ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,
VBE(off) = 5 V, TC = 25°C)
tsv
0.75
µs
Crossover Time
(ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,
VBE(off) = 5 V, TC = 25°C)
tc
0.25
µs
Fall Time
VBE(off) = 5 V, TC = 25°C)
tfi
0.15
µs
(1) Pulse Test: PW = 300
µs, Duty Cycle v 2%.


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