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MJ10020 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MJ10020
Description  60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10020 Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola Bipolar Power Transistor Device Data
Designer's™ Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line operated switchmode applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
150 ns Inductive Fall Time at 25
_C (Typ)
750 ns Inductive Storage Time at 25
_C (Typ)
• Operating Temperature Range –65 to +200_C
• 100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJ10020
MJ10021
Unit
Collector–Emitter Voltage
VCEO
200
250
Vdc
Collector–Emitter Voltage
VCEV
300
350
Vdc
Emitter Base Voltage
VEB
8.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
60
100
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
20
30
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
250
143
1.43
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.7
_C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10020/D
© Motorola, Inc. 1995
60 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
200 AND 250 VOLTS
250 WATTS
MJ10020
MJ10021
CASE 197A–05
TO–204AE (TO–3)
≈ 100
≈ 15


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