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MJ10020 Datasheet(PDF) 6 Page - Motorola, Inc

Part No. MJ10020
Description  60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10020 Datasheet(HTML) 6 Page - Motorola, Inc

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MJ10020 MJ10021
6
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 13 and are
specified for these devices under the test conditions shown.
100
Figure 13. Maximum Forward Bias Safe
Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
5.0
10
20
50
300
10
1.0
0
Figure 14. Maximum RBSOA, Reverse Bias
Safe Operating Area
VCEM, COLLECTOR–EMITTER VOLTAGE (VOLTS)
50
150
250
40
100
TC = 25°C
80
60
20
IC/IB ≥ 25
25
°C ≤ TJ ≤ 100°C
100
200
250
0.1
0.01
dc
1 ms
100
200
300
30
70
50
10
90
0
TURN–OFF LOAD LINE
BOUNDARY FOR MJ10021
THE LOCUS FOR MJ10020
IS 50 V LESS
10
µs
100
µs
1.0
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
VBE(off) = 5 V
VBE(off) = 0 V
VBE(off) = 2 V
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 13 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 13 may be found at any case tem-
perature by using the appropriate curve on Figure 15.
TJ(pk) may be calculated from the data in Figure 12. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For Inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 14 gives the RBSOA character-
istics.
0
Figure 15. Power Derating
TC, CASE TEMPERATURE (°C)
40
80
120
40
0
100
80
60
20
200
SECOND BREAKDOWN
DERATING
160
THERMAL
DERATING


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