Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

MJ10015 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MJ10015
Description  50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10015 Datasheet(HTML) 2 Page - Motorola, Inc

  MJ10015 Datasheet HTML 1Page - Motorola, Inc MJ10015 Datasheet HTML 2Page - Motorola, Inc MJ10015 Datasheet HTML 3Page - Motorola, Inc MJ10015 Datasheet HTML 4Page - Motorola, Inc MJ10015 Datasheet HTML 5Page - Motorola, Inc MJ10015 Datasheet HTML 6Page - Motorola, Inc  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
MJ10015 MJ10016
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0, Vclamp = Rated VCEO)
MJ10015
MJ10016
VCEO(sus)
400
500
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
ICEV
0.25
mAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
IEBO
350
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 7
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 8
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 20 Adc, VCE = 5.0 Vdc)
(IC = 40 Adc, VCE = 5.0 Vdc)
hFE
25
10
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
(IC = 50 Adc, IB = 10 Adc)
VCE(sat)
2.2
5.0
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
VBE(sat)
2.75
Vdc
Diode Forward Voltage (2)
(IF = 20 Adc)
Vf
2.5
5.0
Vdc
DYNAMIC CHARACTERISTIC
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
750
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC = 20 A,
IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs
Duty Cycle
v 2%).
td
0.14
0.3
µs
Rise Time
(VCC = 250 Vdc, IC = 20 A,
IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs
Duty Cycle
v 2%).
tr
0.3
1.0
µs
Storage Time
IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs
Duty Cycle
v 2%).
ts
0.8
2.5
µs
Fall Time
v 2%).
tf
0.3
1.0
µs
Inductive Load, Clamped (Table 1)
Storage Time
(IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A,
VBE(off) = 5.0 Vdc)
tsv
1.0
2.5
µs
Crossover Time
(IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A,
VBE(off) = 5.0 Vdc)
tc
0.36
1.0
µs
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle v 2%.
(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(2) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.


Html Pages

1  2  3  4  5  6 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn