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MJ10015 Datasheet(PDF) 5 Page - Motorola, Inc

Part No. MJ10015
Description  50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10015 Datasheet(HTML) 5 Page - Motorola, Inc

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MJ10015 MJ10016
5
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 7 and 8 are
specified ratings for these devices under the test conditions
shown.
1.0
Figure 7. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
50
0.005
50
20
2.0
1.0
5.0
0.5
1000
10
100
0
Figure 8. Reverse Bias Switching Safe
Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
200
300
40
20
50
400
TC = 25°C
0.1
200
dc
2.0
20
500
30
10
0.2
0.02
0.01
500
VBE(off) = 5.0 V
TC = 25°C
MJ10015
0.05
10
TURN–OFF LOAD LINE
BOUNDARY FOR MJ10016
THE LOCUS FOR MJ10015
IS 100 V LESS
10
µs
IC
IB1
u 10
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
MJ10016
100
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two Iimitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 7 may be found at any case tem-
perature by using the appropriate curve on Figure 9.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 8 gives the complete RBSOA
characteristics.
0
Figure 9. Power Derating
TC, CASE TEMPERATURE (°C)
0
40
80
80
40
100
120
160
200
60
20
THERMAL
DERATING
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
1
2
3
4
5
6
10
8
6
5
4
3
2
0
0
SEE TABLE 1 FOR CONDITIONS,
FIGURE 6 FOR WAVESHAPE.
9
7
1
7
8
Figure 10. Typical Reverse Base Current
versus VBE(off) With No External Base
Resistance
IC = 20 A
FORWARD BIAS
SECOND BREAKDOWN
DERATING


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