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MJ10012 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MJ10012
Description  10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10012 Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola Bipolar Power Transistor Device Data
NPN Silicon Power Darlington
Transistor
The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors
designed for automotive ignition, switching regulator and motor control applications.
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 400 Vdc (Min)
• 175 Watts Capability at 50 Volts
• Automotive Functional Tests
MAXIMUM RATINGS
Rating
Symbol
MJ10012
MJH10012
Unit
Collector–Emitter Voltage
VCEO
400
Vdc
Collector–Emitter Voltage
(RBE = 27 Ω)
VCER
550
Vdc
Collector–Base Voltage
VCBO
600
Vdc
Emitter–Base Voltage
VEBO
8.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
10
15
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation
@ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
175
100
1.0
118
47.5
1.05
Watts
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.0
0.95
_C/W
Maximum Lead Temperature for
Soldering Purposes: 1/8
″ from
Case for 5 Seconds
TL
275
275
_C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10012/D
© Motorola, Inc. 1995
MJ10012
MJH10012
10 AMPERE
POWER TRANSISTORS
DARLINGTON NPN
SILICON
400 VOLTS
175 AND 118 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ10012
CASE 340D–01
TO–218 TYPE
MJH10012
≈ 1 k
≈ 30
EMITTER
BASE
COLLECTOR
REV 2


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