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BAV70T Datasheet(PDF) 1 Page - WILLAS ELECTRONIC CORP

Part No. BAV70T
Description  SOT-523 Plastic-Encapsulate Diodes
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Manufacturer  WILLAS [WILLAS ELECTRONIC CORP]
Direct Link  http://www.willas.com.tw
Logo WILLAS - WILLAS ELECTRONIC CORP

BAV70T Datasheet(HTML) 1 Page - WILLAS ELECTRONIC CORP

  BAV70T Datasheet HTML 1Page - WILLAS ELECTRONIC CORP BAV70T Datasheet HTML 2Page - WILLAS ELECTRONIC CORP BAV70T Datasheet HTML 3Page - WILLAS ELECTRONIC CORP  
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SWITCHING DIODE
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
BAW56T Marking: JD
BAV70T
Marking: JJ
BAV99T
Marking: JE
Maximum Ratings @Ta=25
Parameter
Symbol
Limit
Unit
Reverse voltage
VR
85
V
Forward current
IO
75
mA
Forward power dissipation
PD
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Reverse breakdown voltage
V(BR)
IR= 1μA
85
V
IR1
VR=75V
2
μA
Reverse voltage leakage current
IR2
VR=25V
0.03
μA
Forward voltage
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Diode capacitance
CD
VR=0
f=1MHz
1.5
pF
Reverse recovery time
t r r
IF=IR=10mA
Irr=0.1×IR,RL=100Ω
4
n
s
SOT-523
2012-1
WILLAS ELECTRONIC CORP.
SOT-523 Plastic-Encapsulate Diodes
BAV70T
BAV99T
BAW56T
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Package outline
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable per MIL-STD-750
,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY
SOD-123
PACKAGE
WILLAS
BARRIER RECTIFIERS -20V- 200V
FM120-M
THRU
FM1200-M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
WILLAS ELECTRONIC CORP.
201
2-06
 
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100
150
200
Volts
Volts
Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
 
IFSM
1.0
 
30
Amps
 
Amps
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
 
 
-55 to +125
40
120
 
- 65 to +175
 
 
-55 to +150
℃/W
PF
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Volts
@TA=25℃
0.5
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@TA=125℃
IR
10
 
mAmps
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Moisture Sensitivity Level 1


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