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MJ10005 Datasheet(PDF) 2 Page - Motorola, Inc

Part # MJ10005
Description  20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10005 Datasheet(HTML) 2 Page - Motorola, Inc

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MJ10005
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted).
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 250 mA, IB = 0, Vclamp = Rated VCEO)
VCEO(sus)
400
Vdc
Collector Emitter Sustaining Voltage (Table 1, Figure 12)
(IC = 2.0 A, Vclamp = Rated VCEX, TC = 100_C)
(IC = 10 A, Vclamp = Rated VCEX, TC = 100_C)
VCEX(sus)
450
325
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
0.25
5.0
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
ICER
5.0
mAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
IEBO
175
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 11
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 10 Adc, VCE = 5.0 Vdc)
hFE
50
40
600
400
Collector Emitter Saturation Voltage
(IC = 10 Adc, IB = 400 mAdc)
(IC = 20 Adc, IB = 2.0 Adc)
(IC = 10 Adc, IB = 400 mAdc, TC = 100_C)
VCE(sat)
1.9
3.0
2.0
Vdc
Base Emitter Saturation Voltage
(IC = 10 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 400 mAdc, TC = 100_C)
VBE(sat)
2.5
2.5
Vdc
Diode Forward Voltage (1)
(IF = 10 Adc)
Vf
3.0
5.0
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
hfe
10
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
100
325
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC = 10 A,
IB1 = 400 mA, VBE(off) = 5.0 Vdc, tp = 50 µs,
Duty Cycle
v 2%).
td
0.12
0.2
µs
Rise Time
(VCC = 250 Vdc, IC = 10 A,
IB1 = 400 mA, VBE(off) = 5.0 Vdc, tp = 50 µs,
Duty Cycle
v 2%).
tr
0.2
0.6
µs
Storage Time
IB1 = 400 mA, VBE(off) = 5.0 Vdc, tp = 50 µs,
Duty Cycle
v 2%).
ts
0.6
1.5
µs
Fall Time
v 2%).
tf
0.15
0.5
µs
Inductive Load Clamped (Table 1)
Storage Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
VBE(off) = 5.0 Vdc, TC = 100_C)
tsv
1.0
2.5
µs
Crossover Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
VBE(off) = 5.0 Vdc, TC = 100_C)
tc
0.4
1.5
µs
Storage Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
VBE(off) = 5.0 Vdc, TC = 25_C)
tsv
0.65
µs
Crossover Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
VBE(off) = 5.0 Vdc, TC = 25_C)
tc
0.2
µs
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: PW = 300
µs, Duty Cycle v 2%.


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