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IS43DR86400 Datasheet(PDF) 19 Page - Integrated Silicon Solution, Inc |
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IS43DR86400 Datasheet(HTML) 19 Page - Integrated Silicon Solution, Inc |
19 / 29 page IS43DR86400, IS43/46DR16320 Integrated Silicon Solution, Inc. – www.issi.com – 19 Rev. 00A, 11/17/2009 IDD Specifications and Conditions IDD Measurement Conditions Symbol Parameter/Condition IDD0 Operating Current ‐ One bank Active ‐ Precharge: tRC = tRCmin; tCK =tCKmin ; Databus inputs are SWITCHING; Address and control inputs are SWITCHING, CS# = HIGH between valid commands. IDD1 Operating Current ‐ One bank Active ‐ Read ‐ Precharge: One bank is accessed with tRCmin, BL = 4, tCK = tCKmin, AL = 0, CL = CLmin; Address bus and control inputs are SWITCHING,CS# = HIGH between valid commands; lOUT = 0 mA. IDD2P Precharge Power‐Down Current: All banks idle; power‐down mode; CKE is LOW; tCK = tCKmin; Data Bus inputs are FLOATING. IDD2N Precharge Standby Current: All banks idle; CS# is HIGH; CKE is HIGH; tCK = tCKmin; Address bus, data bus, and control inputs are SWITCHING. IDD2Q Precharge Quiet Standby Current: All banks idle; CS# is HIGH; CKE is HIGH; tCK = tCKmin; Address bus and control inputs are STABLE; Data Bus inputs are FLOATING. IDD3Pf Active Power‐Down Current: All banks open; CKE is LOW; Address bus and control inputs are STABLE; Data Bus inputs are FLOATING. MRS A12 bit is set to “0”(Fast Power‐down Exit). IDD3Ps Active Power‐Down Current: All banks open; CKE is LOW; Address bus and control inputs are STABLE; Data Bus inputs are FLOATING. MRS A12 bit is set to “1”(Slow Power‐down Exit). IDD3N Active Standby Current: All banks open; CS# is HIGH; CKE is HIGH; tRC = tRASmax; tCK = tCKmin; Address bus, data bus, and control inputs are SWITCHING. IDD4R Operating Current ‐ Burst Read: All banks active; continuous burst reads; BL = 4; AL = 0, CL = CLmin; tCK = tCKmin; Address bus, data bus, and control inputs are SWITCHING; IOUT = 0mA. IDD4W Operating Current ‐ Burst Write: All banks active; continuous burst writes; BL = 4; AL = 0, CL = CLmin; tCK = tCKmin; Address bus, data bus, and control inputs are SWITCHING; IOUT = 0mA. IDD5B Burst Auto‐Refresh Current: Refresh command at tRFC = tRFCmin, tCK = tCKmin, CS# is HIGH between valid commands. IDD6 Self‐Refresh Current: CKE 0.2V; external clock off, CK and CK# at 0V; tCK = tCKmin; Address bus, data bus, and control inputs, are FLOATING. IDD7 Operating Bank Interleave Read Current: 1. All bank interleaving with BL = 4; BL = 4, CL = CLmin; tRCD = tRCDmin; tRRD = tRRDmin; AL = tRCD ‐ 1, IOUT = 0 mA. Address and control inputs are stable during DESELECT; Data Bus inputs are SWITCHING. 2. Timing pattern: a. DDR2 ‐400 (200Mhz, CL=3) : tCK = 5 ns, BL = 4, tRCD = 3 x tCK, AL = 2 x tCK, tRC = 12 x tCK Read : A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D b. DDR2 ‐533 (266Mhz, CL=4) : tCK = 3.7 ns, BL = 4, tRCD = 4 x tCK, AL = 3 x tCK, tCK = 16 x tCK Read : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D c. DDR2 ‐667 (333Mhz, CL=4) :tCK = 3 ns, BL = 4, tRCD = 4 x tCK, AL = 3 x tCK, tRC = 19 x tCK Read : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D Notes: 1. Data Bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS and UDQS#. 2. Definitions for IDD : a. LOW is defined as VIN ≤ VILAC(Max). b. HIGH is defined as VIN ≥ VIHAC(Min). c. STABLE is defined as inputs are stable at a HIGH or LOW level. d. FLOATING is defined as inputs are VREF. e. SWITCHING is defined as inputs are changing between HIGH and LOW every other clock for address and control signals, and inputs changing 50% of each data transfer for DQ signals. 3. Legend: A=Activate, RA=Read with Auto‐Precharge, D=DESELECT. |
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