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IS43DR86400B Datasheet(PDF) 9 Page - Integrated Silicon Solution, Inc

Part # IS43DR86400B
Description  512Mb (x8, x16) DDR2 SDRAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS43DR86400B Datasheet(HTML) 9 Page - Integrated Silicon Solution, Inc

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IS43/46DR86400B, IS43/46DR16320B
Integrated Silicon Solution, Inc. – www.issi.com –
9
Rev. I, 8/01/2012
DDR2 Extended Mode Register 3 (EMR[3]) Setting
No function is defined in extended mode register 3. The default value of the extended mode register 3 is not defined. Therefore, the
extended mode register 3 must be programmed during initialization for proper operation.
DDR2 Extended Mode Register 3 (EMR[3]) Diagram
BA1
BA0
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
1
1
0*
0*
0*
0*
0*
0*
0*
0*
0*
0*
0*
0*
0*
0*
Address Field
Mode Register
Note: All bits in EMR[3] except BA0 and BA1 are reserved for future use and must be set to 0 when programming the EMR[3].
Truth Tables
Operation or timing that is not specified is illegal, and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
Command Truth Table
Previous
Cycle
Current
Cycle
(Extended) Mode Register
H
H
L
L
L
L
BA
1, 2
Refresh (REF)
H
H
L
L
L
H
X
X
X
X
1
Self Refresh Entry
H
L
L
L
L
H
X
X
X
X
1, 8
H
X
X
X
L
H
H
H
Single Bank Precharge
H
H
L
L
H
L
BA
X
L
X
1, 2
Precharge All Banks
H
H
L
L
H
L
X
X
H
X
1
Bank Activate
H
H
L
L
H
H
BA
1, 2
Write
H
H
L
H
L
L
BA
X
L
Column 1, 2, 3, 10
Write with Auto Precharge
H
H
L
H
L
L
BA
X
H
Column 1, 2, 3, 10
Read
H
H
L
H
L
H
BA
X
L
Column 1, 2, 3, 10
Read with Auto Precharge
H
H
L
H
L
H
BA
X
H
Column 1, 2, 3, 10
No Operation (NOP)
H
X
L
H
H
H
X
X
X
X
1
Device Deselect
H
X
H
X
X
X
X
X
X
X
1
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
1,4
Power Down Exit
L
H
X
X
X
X
1, 4
Row Address
Power Down Entry
H
L
X
X
X
X
X
X
X
1, 7, 8
Sel Refresh Exit
L
H
X
A10 A9-A0
Notes
Opcode
CAS#
WE#
BA0-BA1
An(9)-A11
Function
CKE
CS#
RAS#
Notes:
1.
All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE# and CKE at the rising edge of the clock.
2.
Bank addresses BA0, BA1 (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
3.
Burst reads or writes at BL=4 cannot be terminated or interrupted. See sections "Reads interrupted by a Read" and "Writes interrupted by a Write" for details.
4.
The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh requirements
5.
The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
6.
“X” means “H or L (but a defined logic level)”
7.
Self refresh exit is asynchronous.
8.
VREF must be maintained during Self Refresh operation.
9.
An refers to the MSBs of addresseses. An=A13 for x8, and An=A12 for x16.


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