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2SC5551A Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # 2SC5551A
Description  High-Frequency Medium-Output Amplifier Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5551A Datasheet(HTML) 1 Page - Sanyo Semicon Device

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2SC5551A
No. A1118-1/6
Features
•
High fT : (fT=3.5GHz typ)
•
Large current : (IC=300mA)
•
Large allowable collector dissipation (1.3W max)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
40
V
Collector-to-Emitter Voltage
VCEO
30
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
300
mA
Collector Current (Pulse)
ICP
600
mA
Collector Dissipation
PC
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Ordering number : ENA1118A
80812 TKIM/D0209AB TKIM TC-00002042
SANYO Semiconductors
DATA SHEET
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
Electrical Connection
TD
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
2SC5551AE-TD-E
2SC5551AF-TD-E
RANK
2
3
1
2SC5551A
NPN Epitaxial Planar Silicon Transistor
High-Frequency Medium-Output
Amplifier Applications


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