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EN6307C Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. EN6307C
Description  DC / DC Converter Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

EN6307C Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SA2013 / 2SC5566
No.6307-2/8
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Current
IC
(--)4
A
Collector Current (Pulse)
ICP
(--)7
A
Base Current
IB
(--)600
mA
Collector Dissipation
PC
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
μA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(360)400
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(24)15
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=(--)1A, IB=(--)50mA
(--105)85
(--180)130
mV
VCE(sat)2
IC=(--)2A, IB=(--)100mA
(--200)150
(--340)225
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)100mA
(--)0.89
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=(--)100μA, RBE=0Ω
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-ON Time
ton
See specified Test Circuit.
(30)35
ns
Storage Time
tstg
(230)300
ns
Fall Time
tf
(15)20
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA2013-TD-E
PCP
1,000pcs./reel
Pb Free
2SC5566-TD-E
PCP
1,000pcs./reel
VR10
RB
VCC=25V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
25
Ω
100
μF
470
μF
PW=20
μs
IB1
D.C.
≤1%
IB2
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.


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