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FM25V01-G Datasheet(PDF) 11 Page - Cypress Semiconductor |
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FM25V01-G Datasheet(HTML) 11 Page - Cypress Semiconductor |
11 / 15 page FM25V01 - 128Kb SPI FRAM Document Number: 001-84492 Rev. *B Page 11 of 18 Electrical Specifications Absolute Maximum Ratings Symbol Description Ratings VDD Power Supply Voltage with respect to VSS -1.0V to +4.5V VIN Voltage on any pin with respect to VSS -1.0V to +4.5V and VIN < VDD+1.0V TSTG Storage Temperature -55 C to + 125 C TLEAD Lead Temperature (Soldering, 10 seconds) 260 C VESD Electrostatic Discharge Voltage - Human Body Model (AEC-Q100-002 Rev. E) - Charged Device Model (AEC-Q100-011 Rev. B) - Machine Model (AEC-Q100-003 Rev. E) TBD 1.25kV 200V Package Moisture Sensitivity Level MSL-1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. DC Operating Conditions (TA = -40 C to + 85 C, VDD = 2.0V to 3.6V unless otherwise specified) Symbol Parameter Min Typ Max Units Notes VDD Power Supply Voltage 2.0 3.3 3.6 V IDD Power Supply Operating Current @ C = 1 MHz @ C = 40 MHz 0.12 1.3 0.22 2.5 mA mA 1 ISB Standby Current 90 150 A 2 IZZ Sleep Mode Current 5 8 A 3 ILI Input Leakage Current - 1 A 4 ILO Output Leakage Current - 1 A 4 VIH Input High Voltage 0.7 VDD VDD + 0.3 V VIL Input Low Voltage -0.3 0.3 VDD V VOH1 Output High Voltage (IOH = -1 mA, VDD=2.7V) 2.4 - V VOH2 Output High Voltage (IOH = -100 A) VDD-0.2 - V VOL1 Output Low Voltage (IOL = 2 mA, VDD=2.7V) - 0.4 V VOL2 Output Low Voltage (IOL = 150 A) - 0.2 V RIN Input Resistance (/HOLD pin) For VIN = VIH (min) For VIN = VIL (max) 40 1 K M 5 Notes 1. C toggling between VDD-0.2V and VSS, other inputs VSS or VDD-0.2V. 2. /S=VDD. All inputs VSS or VDD. 3. In Sleep mode and /S=VDD. All inputs VSS or VDD. 4. VSS VIN VDD and VSS VOUT VDD. 5. The input pull-up circuit is stronger (> 40K ) when the input voltage is above VIH and weak (> 1M ) when the input voltage is below VIL. Data Retention (TA = -40 C to + 85 C) Parameter Min Max Units Notes Data Retention 10 - Years |
Similar Part No. - FM25V01-G |
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Similar Description - FM25V01-G |
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