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BDW83C Datasheet(PDF) 1 Page - Comset Semiconductor |
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BDW83C Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, 23/10/2012 COMSET SEMICONDUCTORS 1 | 3 They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage IB = 0 BDW83 45 V BDW83A 60 BDW83B 80 BDW83C 100 BDW83D 120 VCBO Collector- Emitter Voltage IE = 0 BDW83 45 V BDW83A 60 BDW83B 80 BDW83C 100 BDW83D 120 VEBO Emitter-Base Voltage IC = 0 5 V IC Collector Current 15 A IB Base Current 0.5 A Pt Total Power Dissipation 25°C case temperatur 150 W 25°C free aire temperatur 3.5 TJ Junction Temperature -65 to +150 °C TStg Storage Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Junction to Case Thermal Resistance 0.83 °C/W RthJA Junction to Free Air Thermal Resistance 35.7 N NP PN N S SIIL LIIC CO ON N D DA AR RL LIIN NG GT TO ON NS S P PO OW WE ER R T TR RA AN NS SIIS ST TO OR RS S |
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Similar Description - BDW83C |
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