NPN BD239 – A – B – C

22/10/2012

COMSET SEMICONDUCTORS

1/3

M

G

A

The BD239, A, B, C are mounted in Jedec TO-220 plastic package.

They are the silicon epitaxial-base Power Transistors for use in medium power linear and

switching applications.

The PNP complements are BD240, A, B, C.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

BD239

45

V

BD239A

60

BD239B

80

BD239C

100

BD239

55

V

BD239A

70

BD239B

90

BD239C

115

Collector-Base Voltage

BD239

45

V

BD239A

60

BD239B

80

BD239C

100

Emitter-Base Voltage

5.0

V

Collector Current

3

A

7

Base Current

0.5

A

Power Dissipation

30

W

30

W

Junction Temperature

150

°C

Storage Temperature

-65 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction-ambient

70

°C/W

Thermal Resistance, Junction-case

4.17

°C/W