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SGM2014AN Datasheet(PDF) 2 Page - Sony Corporation

Part # SGM2014AN
Description  GaAs N-channel Dual Gate MES FET
Download  5 Pages
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Manufacturer  SONY [Sony Corporation]
Direct Link  http://www.sony.co.jp
Logo SONY - Sony Corporation

SGM2014AN Datasheet(HTML) 2 Page - Sony Corporation

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SGM2014AN
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2
3
4
5
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0
10
20
30
40
VDS – Drain to source voltage [V]
ID vs. VDS
(VG2S = 1.5V)
VG1S
= 0V
–0.3V
–0.6V
–0.9V
–1.2V
–1.5V
–2.0
–1.5
–1.0
–0.5
0
0
10
15
20
25
VG1S – Gate 1 to source voltage [V]
ID vs. VG1S
(VDS = 5V)
VG2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.5V
5
–1.0V
Typical Characteristics (Ta = 25°C)
Electrical Characteristics
(Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
IDSX
IG1SS
IG2SS
IDSS
VG1S (OFF)
VG2S (OFF)
gm
Ciss
Crss
NF
Ga
VDS = 12V
VG1S = –4V
VG2S = 0V
VG1S = –4.5V
VG2S = 0V
VDS = 0V
VG2S = –4.5V
VG1S = 0V
VDS = 0V
VDS = 5V
VG1S = 0V
VG2S = 0V
VDS = 5V
ID = 100µA
VG2S = 0V
VDS = 5V
ID = 100µA
VG1S = 0V
VDS = 5V
ID = 10mA
VG2S =1.5V
f = 1kHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 900MHz
8
13
15
17
0.9
25
1.5
18
50
–8
–8
28
–2.5
–2.5
2
50
2.5
µA
µA
µA
mA
V
V
ms
pF
fF
dB
dB
Symbol
Condition
Min.
Typ.
Max.
unit


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