Preliminary

GaN-SiC Pallet Amplifier

RTP26030-22

▪ Tel : 82-31-250-5078

▪ All specifications may change without notice.

▪ rfsales@rfhic.com

▪ Version 0.1

Product Features

Application

• Doherty amplifier design

• GaN on SiC HEMT

• Small and light weight

• 50 Ohm Input/Output impedance matched

• Highly reliable and rugged design

• High efficiency, High Gain

• LTE, WiMAX DPD amplifier

• General purpose RF amplifier

Description

The RTP26030-22 is designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high

efficiency. The RTP26030-22 is DPD application amplifier.

Electrical Specifications @ VDD=+48VDC, T=25

°C, 50Ω

System

PARAMETER

Symbol

Min

Typ

Max

Unit

Frequency Range

BW

2496

-

2690

MHz

Output Power

-

44.6

dBm

Instantaneous Bandwidth

SBW

20

30

MHz

Output Power @ Psat G.C.P

-

53.4

-

dBm

Small Signal Gain

SSG

50

55

-

dB

Small Signal Gain Flatness

ΔG

-

± 1.0

± 1.5

dB

Gain Variation

ΔGt

± 3.0

dB

ACLR

-20

-25

dBc

ACLR with DPD

ACLR

-50

dBc

Forward Coupling Level

FC

9

10

11

dBm

Operating Voltage 1

VDC1

48

Volt

Operating Voltage 2

VDC2

5.6

Volt

TDD Operating Voltage

VTDD

5.0

Volt

TDD Transition time

STDD

0.8

1.2

uS

EC

-

41

-

%

Pallet Efficiency @ Pout 26.3W

EP

-

37

-

%

※1 Test Signal Condition: LTE 10MHz 1FA(PAR 7.5dB), Test DPD solution: Optichron DPD(OP6180)

※2 Chain Efficiency is an entire operating transistor efficiency excluded isolator and coupler.

Environmental Characteristics

PARAMETER

Symbol

Min

Typ

Max

Unit

Operating Temperature

-40

-

+60

°C

Storage Temperature

Ts

-45

-

+90

°C