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▪ Tel : 82-31-250-5078

▪ All specifications may change without notice.

▪ rfsales@rfhic.com

▪ Version 0.1

Product Features

Application

• Doherty amplifier design

• GaN on SiC HEMT

• Small and light weight

• 50 Ohm Input/Output impedance matched

• Highly reliable and rugged design

• High efficiency

• WCDMA, LTE DPD amplifier

• General purpose RF amplifier

Description

The RTP26010-N1 is designed for RF system application frequencies from 2570MHz to 2690MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high

efficiency. The RTP26010-N1 is DPD application amplifier.

Electrical Specifications @ VDD=+28VDC, T=25

°C, 50Ω

System

PARAMETER

Symbol

Min

Typ

Max

Unit

Frequency Range

BW

2570

-

2690

MHz

Output Power

-

10

12

Watt

Output Power @ Psat G.C.P

-

47.5

-

Watt

Small Signal Gain

SSG

-

40

-

dB

Small Signal Gain Flatness

ΔG

-

± 1.0

± 2

dB

Gain Variation

ΔGt

± 3.0

-

dB

ACLR @ WCDMA 20MHz 4FA

ACLR

-25

-30

-

dBr

ACLR with DPD

ACLR

-

-50

-

dBr

Forward Coupling

FC

-

-30

-

dB

Operating Voltage

VDC

-

28

-

Volt

Efficiency @ Pout 10Watt WCDMA

E

-

38

-

%

Efficiency @ Pout 12Watt LTE

E

-

40

-

%

※ Test Signal Condition: WCDMA 20MHz 4FA (PAR 7.5dB), LTE 10MHz 1FA (PAR 6.5dB), Test DPD solution : Opticron DPD

Environmental Characteristics

PARAMETER

Symbol

Min

Typ

Max

Unit

Operating Temperature

-30

-

+60

°C

Storage Temperature

Ts

-40

-

+90

°C

Mechanical Specifications

PARAMETER

Value

Units

Limits

Dimensions ( L x W x H )

100 x 50 x 20

mm

Max

Weight

170

g

Typical

RF Connectors In/Out/Coupling

MCX / SMA / MCX Female

DC Connectors / Controls

5267-04

Cooling

External Heat sink + airflow