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FJD5304D Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FJD5304D Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FJD5304D Rev. A1 1 July 2010 FJD5304D High Voltage Fast Switching Transistor Features • Built-in Free Wheeling Diode • Wide Safe Operating Area • Small Variance in Storage Time • Suitable for Electronic Ballast Application Absolute Maximum Ratings Ta = 25°C unless otherwise noted * Pulse Test: PW = 300 µs, Duty Cycle = 2% Pulsed Thermal Characteristics Ta = 25°C unless otherwise noted ** Device mounted on minimum pad size. Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP * Base Current (Pulse) 4 A PC Collector Dissipation Tc = 25°C Ta = 25°C 30 1.25 W W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C Symbol Parameter Value Units Rθja Thermal Resistance Junction-Ambient ** 99 °C/W C B E Equivalent Circuit 1. Base 2. Collector 3. Emitter D-PAK 1 |
Similar Part No. - FJD5304D_10 |
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Similar Description - FJD5304D_10 |
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