FGH75T65UPD datasheet(1/10 Pages) FAIRCHILD

Part #	FGH75T65UPD

Description	650V, 75A Field Stop Trench IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FGH75T65UPD Rev. C0

August 2012

FGH75T65UPD

650V, 75A Field Stop Trench IGBT

Features

• Maximum Junction Temperature : TJ = 175

oC

• Positive Temperaure Co-efficient for easy parallel operating

• High current capability

• Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 75A

• High input impedance

• Tightened Parameter Distribution

• RoHS compliant

• Short Circuit Ruggedness > 5us @25oC

General Description

Using Novel Field Stop Trench IGBT Technology, Fairchild’s

new series of Field Stop Trench IGBTs offer the optimum perfor-

mance for Solar Inverter , UPS and Digital Power Generator

where low conduction and switching losses are essential.

Applications

• Solar Inverter, UPS, Digital Power Generator

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Description

Ratings

Units

VCES

Collector to Emitter Voltage

650

V

VGES

Gate to Emitter Voltage

± 20

V

IC

Collector Current

@ TC = 25

oC

150

A

Collector Current

@ TC = 100

oC

75

A

ICM (1)

Pulsed Collector Current

225

A

IF

Diode Forward Current

@ TC = 25

oC

75

A

Diode Forward Current

@ TC = 100

oC

50

A

IFM(1)

Pulsed Diode Maximum Forward Current

225

A

PD

Maximum Power Dissipation

@ TC = 25

oC

375

W

Maximum Power Dissipation

@ TC = 100

oC

187

W

SCWT

Short Circuit Withstand Time

@ TC = 25

oC

5

us

TJ

Operating Junction Temperature

-55 to +175

oC

Tstg

Storage Temperature Range

-55 to +175

oC

TL

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

oC

Symbol

Parameter

Typ.

Max.

Units

RθJC(IGBT)

Thermal Resistance, Junction to Case

-

0.40

oC/W

RθJC(Diode)

Thermal Resistance, Junction to Case

-

0.86

oC/W

RθJA

Thermal Resistance, Junction to Ambient

-

40

oC/W

G

E

C

E

C

G

COLLECTOR

(FLANGE)

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