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FGB40N60SM Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FGB40N60SM Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 9 page 5 www.fairchildsemi.com FGB40N60SM Rev. A Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs. Gate Resistance 4 8 12 16 20 0 4 8 12 16 20 80A IC = 20A 40A Common Emitter TC = 175 o C Gate-Emitter Voltage, VGE [V] 4 8 12 16 20 0 4 8 12 16 20 IC = 20A 40A 80A Common Emitter T C = 25 o C Gate-Emitter Voltage, VGE [V] 0.1 1 10 0 1000 2000 3000 4000 Common Emitter VGE = 0V, f = 1MHz TC = 25 o C C res C oes C ies Collector-Emitter Voltage, VCE [V] 30 0 40 80 120 0 3 6 9 12 15 400V Common Emitter TC = 25 o C 300V V CC = 200V Gate Charge, Qg [nC] 0 10 20 30 40 50 1 10 100 Common Emitter VCC = 400V, VGE = 15V IC = 40A TC = 25 o C TC = 175 o C t d(on) t r Gate Resistance, RG [Ω Ω Ω Ω ] 1 10 100 1000 0.01 0.1 1 10 100 300 1ms 10 ms DC *Notes: 1. TC = 25 o C 2. TJ = 175 o C 3. Single Pulse 10µ µ µ µ s 100µ µ µ µ s Collector-Emitter Voltage, VCE [V] |
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