©2010 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

March 2010

FDS6930B Rev. A1

FDS6930B

Features

■ Fast switching speed

■ Low gate charge

■ High performance trench technology for extremely

■ High power and current handling capability

General Description

These N-Channel Logic Level MOSFETs are produced using

Fairchild Semiconductor’s advanced PowerTrench process that

has been especially tailored to minimize the on-state resistance

and yet maintain superior switching performance.

These devices are well suited for low voltage and battery pow-

ered applications where low in-line power loss and fast switch-

ing are required.

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

± 20

V

Drain Current

– Continuous

(Note 1a)

5.5

A

– Pulsed

20

Power Dissipation for Dual Operation

(Note 1)

2

W

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

1

(Note 1c)

0.9

Operating and Storage Junction Temperature Range

–55 to 150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

40

°C/W

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6930B

FDS6930B

13"

12mm

2500 units

D1

D1

D2

D2

S1

G1

S2

G2

Pin 1

SO-8

4

5

3

6

2

7

1

8