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FDQ7236AS Datasheet(PDF) 6 Page - Fairchild Semiconductor

Part No. FDQ7236AS
Description  Dual Notebook Power Supply N-Channel PowerTrench짰 in SO-14 Package
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDQ7236AS Datasheet(HTML) 6 Page - Fairchild Semiconductor

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FDQ7236AS Rev C
Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7236AS Q2.
Figure 12. FDQ7236AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6670A).
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power dissipated in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
TA = 25
oC
TA = 100
oC
TA = 125
oC
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12nS/div
TIME : 12nS/div


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