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FDP13N50F Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDP13N50F Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page FDP13N50F / FDPF13N50FT Rev.C1 www.fairchildsemi.com 2 Package Marking and Ordering Information T C = 25 oC unless otherwise noted Electrical Characteristics Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP13N50F FDP13N50F TO-220 - - 50 FDPF13N50FT FDPF13N50FT TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25oC- 0.7 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 μA VDS = 400V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 6A - 0.42 0.54 Ω gFS Forward Transconductance VDS = 20V, ID = 6A (Note 4) - 13.3 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 1450 1930 pF Coss Output Capacitance - 198 265 pF Crss Reverse Transfer Capacitance - 14.5 22 pF Qg(tot) Total Gate Charge at 10V VDS = 400V, ID = 13A VGS = 10V (Note 4, 5) -30 39 nC Qgs Gate to Source Gate Charge - 8 - nC Qgd Gate to Drain “Miller” Charge - 12 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 13A RG = 25Ω (Note 4, 5) -28 65 ns tr Turn-On Rise Time - 54 120 ns td(off) Turn-Off Delay Time - 75 160 ns tf Turn-Off Fall Time - 47 105 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 12 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.5 V trr Reverse Recovery Time VGS = 0V, ISD = 12A dIF/dt = 100A/μs (Note 4) - 154 - ns Qrr Reverse Recovery Charge - 0.45 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 9.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
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Similar Description - FDP13N50F_12 |
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