FDP13N50F / FDPF13N50FT Rev.C1

www.fairchildsemi.com

2

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDP13N50F

FDP13N50F

TO-220

-

-

50

FDPF13N50FT

FDPF13N50FT

TO-220F

-

-

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

500

-

-

V

Breakdown Voltage Temperature

Coefficient

0.7

-

Zero Gate Voltage Drain Current

-

-

10

μA

-

-

100

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

-

5.0

V

Static Drain to Source On Resistance

-

0.42

0.54

Ω

Forward Transconductance

(Note 4)

-

13.3

-

S

Input Capacitance

f = 1MHz

-

1450

1930

pF

Output Capacitance

-

198

265

pF

Reverse Transfer Capacitance

-

14.5

22

pF

Total Gate Charge at 10V

(Note 4, 5)

-30

39

nC

Gate to Source Gate Charge

-

8

-

nC

Gate to Drain “Miller” Charge

-

12

-

nC

Turn-On Delay Time

(Note 4, 5)

-28

65

ns

Turn-On Rise Time

-

54

120

ns

Turn-Off Delay Time

-

75

160

ns

Turn-Off Fall Time

-

47

105

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

12

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

48

A

Drain to Source Diode Forward Voltage

-

-

1.5

V

Reverse Recovery Time

(Note 4)

-

154

-

ns

Reverse Recovery Charge

-

0.45

-

μC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics