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IR1167ASPBF Datasheet(PDF) 7 Page - International Rectifier

Part # IR1167ASPBF
Description  SmartRectifierTM CONTROL IC
Download  16 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IR1167ASPBF Datasheet(HTML) 7 Page - International Rectifier

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IR1167AS/BS
GENERAL DESCRIPTION
The IR1167 Smart Rectifier IC can emulate the
operation of diode rectifier by properly driving a
Synchronous Rectifier (SR) MOSFET.
The direction of the rectified current is sensed by the
input comparator using the power MOSFET RDSon
as a shunt resistance and the GATE pin of the
MOSFET is driven accordingly.
Internal blanking logic is used to prevent spurious
transitions and guarantee operation in continuous
(CCM), discountinuous (DCM) and critical (CrCM)
conduction mode.
STATES OF OPERATION
UVLO/Sleep Mode
The IC remains in the UVLO condition until the voltage
on the VCC pin exceeds the VCC turn on threshold
voltage, V
CC ON.
During the time the IC remains in the UVLO state, the
gate drive circuit is inactive and the IC draws a
quiescent current of I
CC START. The UVLO mode is
accessible from any other state of operation whenever
the IC supply voltage condition of VCC < V
CC UVLO
occurs.
The sleep mode is initiated by pulling the EN pin below
2.5V (typ). In this mode the IC is essentially shut down
and draws a very low quiescent supply current.
Normal Mode
The IC enters in normal operating mode once the
UVLO voltage has been exceeded. At this point the
gate driver is operating and the IC will draw a
maximum of ICC from the supply voltage source.
The modes of operation for a Flyback circuit differ
mainly for the turn-off phase of the SR switch, while
the turn-on phase of the secondary switch (which
correspond to the turn off of the primary side switch)
is identical.
Turn-on phase
When the conduction phase of the SR FET is initiated,
current will start flowing through its body diode,
generating a negative VDS voltage across it. The body
diode has generally a much higher voltage drop than
the one caused by the MOSFET on resistance and
therefore will trigger the turn-on threshold VTH2.
At that point the IR1167 will drive the gate of MOSFET
on which will in turn cause the conduction voltage VDS
to drop down. This drop is usually accompained by
some amount of ringing, that can trigger the input
comparator to turn off; hence, a Minimum On Time
(MOT) blanking period is used that will maintain the
power MOSFET on for a minimum amount of time.
The programmed MOT will limit also the minimum duty
VGate
VTH1
VTH2
VTH3
VDS
Input comparator thresholds
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