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FDP085N10A Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FDP085N10A
Description  N-Channel PowerTrench짰 MOSFET 100V, 96A, 8.5m廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDP085N10A Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FDP085N10A_F102 Rev. A
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Soure Voltage
Figure 12. Unclamped Inductive
Switching Capability
-80
-40
0
40
80
120
160
200
0.92
0.96
1.00
1.04
1.08
1.12
*Notes:
1. VGS = 0V
2. ID = 250μA
TJ, Junction Temperature [
o
C]
-80
-40
0
40
80
120
160
200
0.5
1.0
1.5
2.0
2.5
*Notes:
1. VGS = 10V
2. ID = 96A
TJ, Junction Temperature [
o
C]
25
50
75
100
125
150
175
0
20
40
60
80
100
RθJC = 0.8
o
C/W
VGS= 10V
TC, Case Temperature [
o
C]
1
10
100
200
0.1
1
10
100
1000
10μs
100μs
1ms
10ms
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25
o
C
2. TJ = 175
o
C
3. Single Pulse
DC
0
20406080
100
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
, Drain to Source Voltage [V]
0.01
0.1
1
10
100 300
1
10
30
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
STARTING TJ = 25
o
C
STARTING TJ = 150
o
C
tAV, TIME IN AVALANCHE (ms)


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