FDP036N10A Rev. A3

www.fairchildsemi.com

2

Package Marking and Ordering Information

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDP036N10A

FDP036N10A

TO-220

-

-

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

100

-

-

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

-

0.07

-

Zero Gate Voltage Drain Current

-

-

1

μA

-

500

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

2.0

3.0

4.0

V

Static Drain to Source On Resistance

-

3.2

3.6

m

Ω

Forward Transconductance

(Note 4)

-

167

-

S

Input Capacitance

f = 1MHz

-

5485

7295

pF

Output Capacitance

-

2430

3230

pF

Reverse Transfer Capacitance

-

210

315

pF

Total Gate Charge at 10V

-

89

116

nC

Gate to Source Gate Charge

-

24

-

nC

Gate Charge Threshold to Plateau

-

8

-

nC

Gate to Drain “Miller” Charge

-

25

-

nC

Turn-On Delay Time

-22

54

ns

Turn-On Rise Time

-

54

118

ns

Turn-Off Delay Time

-

37

84

ns

Turn-Off Fall Time

-

11

32

ns

ESR

Equivalent Series Resistance (G-S)

-

1.2

-

Ω

Maximum Continuous Drain to Source Diode Forward Current

-

-

214

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

856

A

Drain to Source Diode Forward Voltage

-

-

1.25

V

Reverse Recovery Time

-72

-

ns

Reverse Recovery Charge

-

129

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics