Electronic Components Datasheet Search |
|
FDP036N10A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
|
FDP036N10A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page FDP036N10A Rev. A3 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP036N10A FDP036N10A TO-220 - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25 oC 100 - - V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25 oC - 0.07 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 μA VDS = 80V, TC = 150 oC- - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 3.0 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.2 3.6 m Ω gFS Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 167 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 5485 7295 pF Coss Output Capacitance - 2430 3230 pF Crss Reverse Transfer Capacitance - 210 315 pF Qg(tot) Total Gate Charge at 10V VDS = 80V, ID = 75A VGS = 10V - 89 116 nC Qgs Gate to Source Gate Charge - 24 - nC Qgs2 Gate Charge Threshold to Plateau - 8 - nC Qgd Gate to Drain “Miller” Charge - 25 - nC td(on) Turn-On Delay Time VDD = 50V, ID = 75A VGS = 10V, RGEN = 4.7Ω -22 54 ns tr Turn-On Rise Time - 54 118 ns td(off) Turn-Off Delay Time - 37 84 ns tf Turn-Off Fall Time - 11 32 ns ESR Equivalent Series Resistance (G-S) - 1.2 - Ω IS Maximum Continuous Drain to Source Diode Forward Current - - 214 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 856 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V trr Reverse Recovery Time VGS = 0V, ISD = 75A, VDD = 80V dIF/dt = 100A/μs -72 - ns Qrr Reverse Recovery Charge - 129 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Starting TJ = 25°C, L = 1mH, IAS = 36.3A 3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
Similar Part No. - FDP036N10A |
|
Similar Description - FDP036N10A |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |