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FDP12N50 Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FDP12N50
Description  N-Channel MOSFET 500V, 11.5A, 0.65廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDP12N50 Datasheet(HTML) 3 Page - Fairchild Semiconductor

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FDP12N50 / FDPF12N50T Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
0.1
1
10
0.1
1
10
20
0.05
*Notes:
1. 250μs Pulse Test
2. TC = 25
oC
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
VDS,Drain-Source Voltage[V]
30
5678
1
10
-55
oC
150
oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
25
oC
VGS,Gate-Source Voltage[V]
40
0.0
0.5
1.0
1.5
2.0
1
10
100
*Notes:
1. V
GS = 0V
2. 250μs Pulse Test
150
oC
V
SD, Body Diode Forward Voltage [V]
25
oC
0
6
12
18
24
30
0.0
0.5
1.0
1.5
* Note : TJ = 25
oC
VGS = 20V
VGS = 10V
ID, Drain Current [A]
0.1
1
10
0
500
1000
1500
2000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
VDS, Drain-Source Voltage [V]
30
0
4
8
12
162024
0
2
4
6
8
10
*Note: ID = 11.5A
VDS = 100V
VDS = 250V
VDS = 400V
Qg, Total Gate Charge [nC]


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