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FDMS3620S Datasheet(PDF) 8 Page - Fairchild Semiconductor

Part # FDMS3620S
Description  PowerTrench짰 PowerStage 25V Asymmetric Dual N-Channel MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDMS3620S Datasheet(HTML) 8 Page - Fairchild Semiconductor

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©2012 Fairchild Semiconductor Corporation
8
www.fairchildsemi.com
FDMS3620S Rev.C1
Typical Characteristics (Q2 N-Channel) T
J = 25°C unless otherwise noted
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs Drain
to Source Voltage
Figure 22. Unclamped Inductive
Switching Capability
Figure 23. Maximum Continuous Drain
Current vs Case Temperature
Figure 24. Forward Bias Safe
Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
0
20
406080
100
120
0
2
4
6
8
10
ID = 38 A
VDD = 15 V
VDD = 13 V
Qg, GATE CHARGE (nC)
VDD = 10 V
0.1
1
10
30
10
100
1000
10000
f = 1 MHz
VGS = 0 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.001
0.01
0.1
1
10
100
1000
1
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
t
AV, TIME IN AVALANCHE (ms)
25
50
75
100
125
150
0
30
60
90
120
150
180
210
VGS = 4.5 V
RθJC = 1.7
o
C/W
VGS = 10 V
T
C
, CASE TEMPERATURE (
o
C
)
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
100 us
1 ms
1 s
10 ms
DC
10 s
100 ms
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 120
oC/W
TA = 25
oC
10
-4
10
-3
10
-2
10
-1
110
100
1000
0.1
1
10
100
1000
10000
SINGLE PULSE
RθJA = 120
oC/W
TA = 25
oC
t, PULSE WIDTH (s)


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