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FDMS3006SDC Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMS3006SDC Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C www.fairchildsemi.com 2 Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C 16 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 30 A 1.3 1.9 m Ω VGS = 4.5 V, ID = 26 A 1.9 2.7 VGS = 10 V, ID = 30 A, TJ = 125 °C 1.8 2.7 gFS Forward Transconductance VDS = 5 V, ID = 30 A 167 S Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 4305 5725 pF Coss Output Capacitance 1630 2170 pF Crss Reverse Transfer Capacitance 102 155 pF Rg Gate Resistance 0.8 Ω td(on) Turn-On Delay Time VDD = 15 V, ID = 30 A, VGS = 10 V, RGEN = 6 Ω 16 29 ns tr Rise Time 5.9 12 ns td(off) Turn-Off Delay Time 39 62 ns tf Fall Time 3.5 10 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 15 V, ID = 30 A 57 80 nC Qg Total Gate Charge VGS = 0 V to 4.5 V 26 36 nC Qgs Gate to Source Gate Charge 12 nC Qgd Gate to Drain “Miller” Charge 5.3 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.4 0.8 V VGS = 0 V, IS = 30 A (Note 2) 0.8 1.2 trr Reverse Recovery Time IF = 30 A, di/dt = 300 A/μs 38 61 ns Qrr Reverse Recovery Charge 58 93 nC |
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