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FDMA7670 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDMA7670 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  www.fairchildsemi.com 2 ©2012 Fairchild Semiconductor Corporation FDMA7670 Rev.C4 NOTES: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C 15 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C –6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 11 A 10 15 m Ω VGS = 4.5 V, ID = 9 A 14 22 VGS = 10 V, ID = 11 A, TJ = 125 °C 14 21 gFS Forward Transconductance VDS = 5 V, ID = 11 A 36 S Ciss Input Capacitance VDS = 15 V, VGS = 0 V f = 1.0 MHz 1020 1360 pF Coss Output Capacitance 315 415 pF Crss Reverse Transfer Capacitance 35 55 pF Rg Gate Resistance 1.7 Ω td(on) Turn-On Delay Time VDD = 15 V, ID = 11 A VGS = 10 V, RGEN = 6 Ω 815 ns tr Rise Time 310 ns td(off) Turn-Off Delay Time 19 34 ns tf Fall Time 310 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 15 V, ID = 11 A 16 22 nC Qg Total Gate Charge VGS = 0 V to 4.5 V 8 10 nC Qgs Gate to Source Gate Charge 3.0 nC Qgd Gate to Drain “Miller” Charge 2.2 nC IS Maximum Continuous Drain-Source Diode Forward Current 2 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.8 1.2 V trr Reverse Recovery Time IF = 11 A, di/dt = 100 A/μs 21 33 ns Qrr Reverse Recovery Charge 6 12 nC a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 °C/W when mounted on a minimum pad of 2 oz copper. |
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