November 2010

©2010 Fairchild Semiconductor Corporation

FDC86244 Rev.C

www.fairchildsemi.com

1

FDC86244

150 V, 2.3 A, 144 m

Ω

Features

High power and current handling capability in a widely used

surface mount package

Fast switching speed

100% UIL Tested

RoHS Compliant

General Description

This

N-Channel

MOSFET

is

produced using Fairchild

been

optimized

for

ruggedness.

Applications

Load Switch

Synchronous Rectifier

Primary Switch

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

150

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

(Note 1a)

2.3

A

-Pulsed

10

Single Pulse Avalanche Energy

(Note 3)

12

mJ

Power Dissipation

(Note 1a)

1.6

W

Power Dissipation

(Note 1b)

0.8

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

30

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

78

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

.244

FDC86244

SSOT-6

7 ’’

8 mm

3000 units

G

S

D

D

D

D

Pin 1

1

2

3

6

5

4

D

D

G

D

D

S