FCP190N60E / FCPF190N60E Rev. C4

www.fairchildsemi.com

2

Package Marking and Ordering Information

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FCP190N60E

FCP190N60E

TO-220

-

-

50

FCPF190N60E

FCPF190N60E

TO-220F

-

-

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

600

-

-

V

650

-

-

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

-

0.67

-

Drain-Source Avalanche Breakdown

Voltage

-

700

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

-

10

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

-

3.5

V

Static Drain to Source On Resistance

-

0.16

0.19

Ω

Forward Transconductance

-20

-

S

Input Capacitance

f = 1MHz

-

2385

3175

pF

Output Capacitance

-

1795

2396

pF

Reverse Transfer Capacitance

-

110

165

pF

Output Capacitance

-

42

-

pF

Effective Output Capacitance

-

178

-

pF

Total Gate Charge at 10V

(Note 4)

-63

82

nC

Gate to Source Gate Charge

-

10

-

nC

Gate to Drain “Miller” Charge

-

24

-

nC

ESR

Equivalent Series Resistance

Drain open

-

5

-

Ω

Turn-On Delay Time

(Note 4)

-23

56

ns

Turn-On Rise Time

-

14

38

ns

Turn-Off Delay Time

-

101

212

ns

Turn-Off Fall Time

-

15

40

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

20.6

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

61.8

A

Drain to Source Diode Forward Voltage

-

-

1.2

V

Reverse Recovery Time

-

308

-

ns

Reverse Recovery Charge

-

4.8

-

μC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Essentially Independent of Operating Temperature Typical Characteristics