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FCP190N60E Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FCP190N60E Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page FCP190N60E / FCPF190N60E Rev. C4 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCP190N60E FCP190N60E TO-220 - - 50 FCPF190N60E FCPF190N60E TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage VGS = 0V, ID = 10mA, TJ = 25°C 600 - - V VGS = 0V, ID = 10mA, TJ = 150°C 650 - - V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 10mA, Referenced to 25 oC - 0.67 - V/oC BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 1 μA VDS = 480V, TC = 125 oC- - 10 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA2.5 - 3.5 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 10A - 0.16 0.19 Ω gFS Forward Transconductance VDS = 20V, ID = 10A -20 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 2385 3175 pF Coss Output Capacitance - 1795 2396 pF Crss Reverse Transfer Capacitance - 110 165 pF Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1.0MHz - 42 - pF Coss eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 178 - pF Qg(tot) Total Gate Charge at 10V VDS = 380V, ID = 10A VGS = 10V (Note 4) -63 82 nC Qgs Gate to Source Gate Charge - 10 - nC Qgd Gate to Drain “Miller” Charge - 24 - nC ESR Equivalent Series Resistance Drain open - 5 - Ω td(on) Turn-On Delay Time VDD = 380V, ID = 10A VGS = 10V, RG = 4.7Ω (Note 4) -23 56 ns tr Turn-On Rise Time - 14 38 ns td(off) Turn-Off Delay Time - 101 212 ns tf Turn-Off Fall Time - 15 40 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 20.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 61.8 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 10A - - 1.2 V trr Reverse Recovery Time VGS = 0V, ISD = 10A dIF/dt = 100A/μs - 308 - ns Qrr Reverse Recovery Charge - 4.8 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics |
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