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ISL9V5036P3 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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ISL9V5036P3 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  Package Marking and Ordering Information Electrical Characteristics T A = 25°C unless otherwise noted Off State Characteristics On State Characteristics Dynamic Characteristics Switching Characteristics Thermal Characteristics Device Marking Device Package Reel Size Tape Width Quantity V5036P ISL9V5036P3_F085 TO-220AB Tube N/A 50 Symbol Parameter Test Conditions Min Typ Max Units BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1KΩ, See Fig. 15 TJ = -40 to 150°C 330 360 390 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C 360 390 420 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA ±12 ±14 - V ICER Collector to Emitter Leakage Current VCER = 250V, RG = 1KΩ, See Fig. 11 TC = 25°C- - 25 µA TC = 150°C- - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, See Fig. 11 TC = 25°C- - 1 mA TC = 150°C- - 40 mA R1 Series Gate Resistance - 75 - Ω R2 Gate to Emitter Resistance 10K - 30K Ω VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.0V TC = 25°C, See Fig. 4 - 1.17 1.60 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A, VGE = 4.5V TC = 150°C - 1.50 1.80 V QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 -32 - nC VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 TC = 25°C1.3 - 2.2 V TC = 150°C 0.75- 1.8V VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V - 3.0 - V td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 -0.7 4 µs trR Current Rise Time-Resistive - 2.1 7 µs td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 2mH, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 10.8 15 µs tfL Current Fall Time-Inductive - 2.8 15 µs SCIS Self Clamped Inductive Switching TJ = 25°C, L = 670 µH, RG = 1KΩ, VGE = 5V, See Fig. 1 & 2 - - 500 mJ RθJC Thermal Resistance Junction-Case - - 0.6 °C/W ©2011 Fairchild Semiconductor Corporation ISL9V5036P3_F085 Rev. C5, August 2011 www.fairchildsemi.com |
Similar Part No. - ISL9V5036P3_11 |
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Similar Description - ISL9V5036P3_11 |
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