Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

FGB3236 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. FGB3236
Description  FGB3236_F085 / FGI3236_F085 EcoSPARKTM 320mJ, 360V, N-Channel Ignition IGBT
Download  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo 

FGB3236 Datasheet(HTML) 2 Page - Fairchild Semiconductor

 
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
FGB3236_F085 / FGI3236_F085 Rev. A
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
A = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Symbol
Parameter
Ratings
Units
BVCER
Collector to Emitter Breakdown Voltage (IC = 1mA)
360
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
24
V
ESCIS25 Self Clamping InductiveSwitchingEnergy(ISCIS=14.7A, L= 3.0mHy,TJ=25°C)
320
mJ
ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4A, L = 3.0mHy, TJ = 150°C)
160
mJ
IC25
Collector Current Continuous, at VGE = 4.0V, TC = 25°C
44
A
IC110
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
27
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total, at TC = 25°C
187
W
Power Dissipation Derating, for TC > 25oC1.25
W/oC
TJ
Operating Junction Temperature Range
-40 to +175
oC
TSTG
Storage Junction Temperature Range
-40 to +175
oC
TL
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
300
oC
TPKG
Max. Lead Temp. for Soldering (Package Body for 10s)
260
oC
ESD
Electrostatic Discharge Voltage at100pF, 1500
4kV
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGB3236
FGB3236_F085
TO263
330mm
24mm
800 units
FGI3236
FGI3236_F085
TO262
Tube
NA
50 units
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
BVCER Collector to Emitter Breakdown Voltage
ICE = 2mA, VGE = 0,
RGE = 1KΩ, See Fig. 15
TJ = -40 to 150oC
330
363
390
V
BVCES
Collector to Emitter Breakdown Voltage
ICE = 10mA, VGE = 0V,
RGE = 0,
TJ = -40 to 150oC
350
378
410
V
BVECS
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES Gate to Emitter Breakdown Voltage
IGES = ±2mA
±12
±14
-
V
ICES
Collector to Emitter Leakage Current
VCES = 250V,
See Fig. 11
TC = 25oC-
-
25
µA
TC = 150oC-
-
1
mA
IECS
Emitter to Collector Leakage Current
VEC = 24V,
See Fig.11
TC = 25oC
-
-
1
mA
TC = 150oC-
-
40
R1
Series Gate Resistance
-
100
-
R2
Gate to Emitter Resistance
10K
-
30K
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V,
TC=25oC,
See Fig. 3
-1.14
1.4
V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V,
TC = 150oC,
See Fig. 4
-1.32
1.7
V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V,
TC = 150oC
-
1.61
2.05
V
ICE(ON) Collector to Emitter On State Current
VGE = 5V, VCE = 5V
50
-
-
A
Device Maximum Ratings T
A = 25°C unless otherwise noted


Html Pages

1  2  3  4  5  6  7  8  9  10 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn