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FCB20N60F Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. FCB20N60F
Description  600V N-Channe MOSFET 600V, 20A, 190mΩ
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FCB20N60F Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FCB20N60F_F085 Rev. C1
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
600
-
-
V
IDSS
Drain to Source Leakage Current
VDS=600V,
TJ = 25oC
-
-
1
μA
VGS = 0V
TJ = 150oC(Note 4)
-
-
500
IGSS
Gate to Source Leakage Current
VGS = ±30V
-
-
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
3.0
4.29
5.0
V
rDS(on)
Drain to Source On Resistance
ID = 20A,
VGS= 10V
TJ = 25oC
-
171
195
m
Ω
TJ = 150oC(Note 4)
-
444
511
m
Ω
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
-
2305
-
pF
Coss
Output Capacitance
-
1310
-
pF
Crss
Reverse Transfer Capacitance
-
105
-
pF
Rg
Gate Resistance
f = 1MHz
-
0.95
-
Ω
Qg(ToT)
Total Gate Charge
VGS = 0 to 10V
VDD = 300V
ID = 20A
-
78
102
nC
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
-
6.6
8.6
nC
Qgs
Gate to Source Gate Charge
-
13.8
-
nC
Qgd
Gate to Drain “Miller“ Charge
-
41.5
-
nC
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
ton
Turn-On Time
VDD = 300V, ID = 20A,
VGS = 10V, RGS = 25Ω
-
-
176
ns
td(on)
Turn-On Delay Time
-
43
-
ns
tr
Rise Time
-
66
-
ns
td(off)
Turn-Off Delay Time
-
211
-
ns
tf
Fall Time
-
42
-
ns
toff
Turn-Off Time
-
-
403
ns
VSD
Source to Drain Diode Voltage
ISD = 20A, VGS = 0V
-
-
1.4
V
Trr
Reverse Recovery Time
IF = 20A, VDD = 480V
dISD/dt = 100A/μs
-
163
-
ns
Qrr
Reverse Recovery Charge
-
1285
-
nC
0


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