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FCB20N60F Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. FCB20N60F
Description  600V N-Channe MOSFET 600V, 20A, 190mΩ
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FCB20N60F Datasheet(HTML) 4 Page - Fairchild Semiconductor

   
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Figure 5.
110
100
1000
0.01
0.1
1
10
100
LIMITED BY
PACKAGE
100us
1ms
10ms
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25
oC
DC
Forward Bias Safe Operating Area
1E-3
0.01
0.1
1
10
1
10
100
STARTING TJ = 150oC
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
246
8
10
1
10
100
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 20V
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 8.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
10
100
TJ = 25oC
TJ = 175 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Forward Diode Characteristics
Figure 9.
0.1
1
10
1
10
100
6V
VGS
15V Top
10V
8V
7V
6.5V
6V
5.5V Bottom
80μs PULSE WIDTH
Tj=25C
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Figure 10.
0.1
1
10
1
10
100
5.5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS
15V Top
10V
8V
7V
6.5V
6V
5.5V Bottom
80μs PULSE WIDTH
Tj=175C
Saturation Characteristics
Typical Characteristics
FCB20N60F_F085 Rev. C1


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