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FOD8316R2V Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FOD8316R2V Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 29 page ©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD8316 Rev. 1.2.0 5 Absolute Maximum Ratings (T A = 25ºC unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Notes: 1. Maximum pulse width = 10µs, maximum duty cycle = 0.2%. 2. This negative output supply voltage is optional. It’s only needed when negative gate drive is implemented. Refer to “Dual Supply Operation – Negative Bias at Vss” on page 23. 3. No derating required across temperature range. 4. Derate linearly above 64°C, free air temperature at a rate of 10.2mW/°C 5. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Note: 6. During power up or down, it is important to ensure that VIN+ remains low until both the input and output supply voltages reaches the proper recommended operating voltages to avoid any momentary instability at the output state. See also the discussion in the “Time to Good Power” section on page 23. Symbol Parameter Value Units TSTG Storage Temperature -40 to +125 ºC TOPR Operating Temperature -40 to +100 ºC TJ Junction Temperature -40 to +125 ºC TSOL Lead Wave Solder Temperature (no solder immersion) Refer to page 27 for reflow temperature profile. 260 for 10 sec ºC IFAULT Fault Output Current 15 mA IO(PEAK) Peak Output Current(1) 3A VE – VSS Negative Output Supply Voltage(2) 0 to 15 V VDD2 – VE Positive Output Supply Voltage -0.5 to 35 – (VE – VSS)V VO(peak) Gate Drive Output Voltage -0.5 to 35 V VDD2 – VSS Output Supply Voltage -0.5 to 35 V VDD1 Positive Input Supply Voltage -0.5 to 6 V VIN+, VIN- and VRESET Input Voltages -0.5 to VDD1 V VFAULT Fault Pin Voltage -0.5 to VDD1 V VS Source of Pull-up PMOS Transistor Voltage VSS + 6.5 to VDD2 V VDESAT DESAT Voltage VE to VE + 11 V PDI Input Power Dissipation(3)(5) 100 mW PDO Output Power Dissipation(4)(5) 600 mW Symbol Parameter Min. Max. Unit TA Ambient Operating Temperature -40 +100 ºC VDD1 Input Supply Voltage(6) 3 5.5 V VDD2 – VSS Total Output Supply Voltage 15 30 V VE – VSS Negative Output Supply Voltage 0 15 V VDD2 – VE Positive Output Supply Voltage(6) 15 30 – (VE – VSS)V VS Source of Pull-up PMOS Transistor Voltage VSS + 7.5 VDD2 V |
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