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AP01L60AT Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

Part No. AP01L60AT
Description  Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
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Maker  A-POWER [Advanced Power Electronics Corp.]
Homepage  http://www.a-power.com.tw
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AP01L60AT Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

   
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Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
600
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.8
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=0.5A
-
-
12
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.5A
-
0.8
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=0.1A
-
6.0
10
nC
Qgs
Gate-Source Charge
VDS=480V
-
1.0
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.5
-
nC
td(on)
Turn-on Delay Time
2
VDD=300V
-
6.6
-
ns
tr
Rise Time
ID=1A
-
5.0
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11.7
-
ns
tf
Fall Time
RD=300Ω
-
9.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
270
pF
Coss
Output Capacitance
VDS=25V
-
30.7
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5.1
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.2V
-
-
160
mA
VSD
Forward On Voltage
2
IS=160mA, VGS=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP01L60AT
± 30V
±100


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