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AP01L60AT Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part No. AP01L60AT
Description  Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
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Maker  A-POWER [Advanced Power Electronics Corp.]
Homepage  http://www.a-power.com.tw
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AP01L60AT Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

   
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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Drain Current v.s.
Fig 10. Typical Power Dissipation
Case Temperature
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP01L60AT
0
4
8
12
16
02
46
8
Q G , Total Gate Charge (nC)
I D =0.1A
V DS =480V
1
10
100
1000
1
101928
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
Ciss
Coss
Crss
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0
0.2
0.4
0.6
0.8
1
0
50
100
150
T A , Case Temperature (
o C )
0
0.05
0.1
0.15
0.2
25
50
75
100
125
150
T A , Case Temperature (
o C )


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