15N70

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-839.a

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

700

V

Breakdown Voltage Temperature

Coefficient

BV

△

0.68

V/°C

Drain-Source Leakage Current

10

µA

100

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

5.0

V

Static Drain-Source On-State Resistance

0.43 0.56

Ω

Forward Transconductance

15

S

DYNAMIC PARAMETERS

Input Capacitance

2790 3600 pF

Output Capacitance

300 390

pF

Reverse Transfer Capacitance

27

35

pF

SWITCHING PARAMETERS

Total Gate Charge

(Note 1, 2)

70

90

nC

Gate to Source Charge

17

nC

Gate to Drain Charge

33

nC

Turn-ON Delay Time

(Note 1, 2)

70

150

ns

Rise Time

180 370

ns

Turn-OFF Delay Time

160 330

ns

Fall-Time

120 250

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

15

A

Maximum Body-Diode Pulsed Current

60

A

Drain-Source Diode Forward Voltage

1.4

V

Body Diode Reverse Recovery Time

(Note1)

460

ns

Body Diode Reverse Recovery Charge

5.7

µC

Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%

2. Essentially independent of operating temperature