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3N70KL-TN3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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3N70KL-TN3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 7 page 3N70K Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R502-836.A ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 700 V Drain-Source Leakage Current IDSS VDS = 700 V, VGS = 0 V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA Reverse VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID = 250μA,Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 1.5A 3.1 4.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz 350 450 pF Output Capacitance COSS 50 65 pF Reverse Transfer Capacitance CRSS 5.5 32 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID = 3.0A, RG = 25Ω (Note 1, 2) 10 40 ns Turn-On Rise Time tR 30 70 ns Turn-Off Delay Time tD(OFF) 20 100 ns Turn-Off Fall Time tF 30 70 ns Total Gate Charge QG VDS= 480V,ID= 3.0A, VGS= 10 V (Note 1, 2) 10 13 nC Gate-Source Charge QGS 2.7 nC Gate-Drain Charge QDD 4.9 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 3.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 12 A Reverse Recovery Time trr VGS = 0 V, IS = 3.0 A, dIF/dt = 100 A/μs (Note 1) 210 ns Reverse Recovery Charge QRR 1.2 µC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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