U74LVC2G86G-S08-R datasheet(2/5 Pages) UTC

Part #	U74LVC2G86G-S08-R

Description	This device has power-down protective circuit, preventing device destruction when it is powered down.

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC UT138FF/FG

TRIAC

UTC UNISONIC TECHNOLOGIES CO., LTD. 2

QW-R401-020,B

ISOLATION LINITING VALUE & CHARACTERISTIC(Ths=25°C,unless otherwise specified)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

R.M.S. isolation voltage form all three terminals to

external heatsink (f=50-60Hz, sinusoidal waveform

R.H.≦65%,clean and dustfree)

Visol

1500

V

Capacitance from MT2 to external heatsink (f=1MHz)

Cisol

12

pF

THERMAL RESISTANCES

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal Resistance, Junction to heatsink

(full or half cycle)

with heatsink compound

without heatsink compound

Rthj-hs

4.0

5.5

K/W

Thermal Resistance, Junction to Ambient

In free air

Rthj-a

55

K/W

STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)

MAX

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

UT138FF UT138FG

UNIT

Gate trigger current

IGT

VD=12V, IT=0.1A

T2+ G+

T2+ G-

T2- G-

T2- G+

5

8

10

22

25

70

50

100

mA

Latching current

IL

VD=12V, IGT=0.1A

T2+ G+

T2+ G-

T2- G-

T2- G+

7

20

8

10

40

60

40

60

90

60

90

mA

Holding current

IH

VD = 12 V, IGT = 0.1 A

6

30

60

mA

On-state voltage

VT

IT=15A

1.4

1.65

V

VD=12V, IT=0.1A

0.7

1.5

V

Gate trigger voltage

VGT

VD=400V, IT=0.1A, Tj=125

°C

0.25

0.4

V

Off-state leakage current

ID

VD=VDRM(max) , Tj=125

°C

0.1

0.5

mA

DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise specified)

MIN

PARAMETER

SYMBOL

CONDITIONS

UT138FF UT138FG

TYP MAX UNIT

Critical rate of change of

Off-state voltage

dVD /dt

VDM = 67% VDRM(max), Tj =125°C;

exponential waveform, gate open

circuit

100

200

250

V/µs

Critical rate of change of

Commutating voltage

dVcom/dt

VDM=400V;Tj=95°C,IT(RMS)=12A;

dIcom /dt =5.4A/ms, gate open

circuit

20

V/µs

Gate controlled turn-on

time

tgt

ITM=16 A, VD= VDRM(max) , IG=0.1A;

dIG/dt=5A/µs

2

µs

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